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- دیتاشیت FDB86566-F085
دیتاشیت FDB86566-F085
مشخصات دیتاشیت
| نام دیتاشیت | FDB86566-F085 Datasheet |
|---|---|
| حجم فایل | 436.775 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت FDB86566-F085 Datasheet |
FDB86566-F085 Datasheet Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDB86566-F085
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 176W
- Total Gate Charge (Qg@Vgs): 80nC@0~10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 6.655nF@30V
- Continuous Drain Current (Id): 110A
- Gate Threshold Voltage (Vgs(th)@Id): 3.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 57pF@30V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2Ω@10V,80A
- Package: TO-263
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101, PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V
- FET Feature: -
- Power Dissipation (Max): 176W (Tj)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263AB)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: FDB865
- detail: N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB)
